Halo Doping-Dependence and Structural Optimization of Short Channel Effects in Partially Insulated MOSFETs (PiFETs)
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چکیده
The effect of a halo doping on SCE in PiFET is investigated. The reduction of the separation between two PiOX layers (LPiOX) followed by a local agglomeration of halo doing region makes the reverse short channel effect efficiently suppressed. As the LPiOX decreases, the subthreshold swing decreases, and the DIBL increases. The final optimized condition is LPiOX =0.7× Lg~1.0× Lg.
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تاریخ انتشار 2007